Formation of NV centers in diamond by a femtosecond laser single pulse.

The NV centers in a diamond were successfully created by the femtosecond laser single pulse. We also investigated the effect on the diamond lattice induced by the different laser pulse widths from both experimental and theoretical perspectives. Interestingly, in spite of the high thermal conductivity of a diamond, we found that there is a suitable pulse repetition rate of several tens kHz for the formation of NV center ensembles by the femtosecond laser pulse irradiation.

Ultra-high dynamic range quantum measurement retaining its sensitivity.

Quantum sensors are highly sensitive since they capitalise on fragile quantum properties such as coherence, while enabling ultra-high spatial resolution. For sensing, the crux is to minimise the measurement uncertainty in a chosen range within a given time. However, basic quantum sensing protocols cannot simultaneously achieve both a high sensitivity and a large range. Here, we demonstrate a non-adaptive algorithm for increasing this range, in principle without limit, for alternating-current field sensing, while being able to get arbitrarily close to the best possible sensitivity. Therefore, it outperforms the standard measurement concept in both sensitivity and range. Also, we explore this algorithm thoroughly by simulation, and discuss the T-2 scaling that this algorithm approaches in the coherent regime, as opposed to the T-1/2 of the standard measurement. The same algorithm can be applied to any modulo-limited sensor.

Room Temperature Electrically Detected Nuclear Spin Coherence of NV Centres in Diamond.

We demonstrate electrical detection of the 14N nuclear spin coherence of NV centres at room temperature. Nuclear spins are candidates for quantum memories in quantum-information devices and quantum sensors, and hence the electrical detection of nuclear spin coherence is essential to develop and integrate such quantum devices. In the present study, we used a pulsed electrically detected electron-nuclear double resonance technique to measure the Rabi oscillations and coherence time (T2) of 14N nuclear spins in NV centres at room temperature. We observed T2 ≈ 0.9 ms at room temperature, however, this result should be taken as a lower limit due to limitations in the longitudinal relaxation time of the NV electron spins. Our results will pave the way for the development of novel electron- and nuclear-spin-based diamond quantum devices.

Extension of the Coherence Time by Generating MW Dressed States in a Single NV Centre in Diamond.

Nitrogen-vacancy (NV) centres in diamond hold promise in quantum sensing applications. A major interest in them is an enhancement of their sensitivity by the extension of the coherence time (T2). In this report, we experimentally generated more than four dressed states in a single NV centre in diamond based on Autler-Townes splitting (ATS). We also observed the extension of the coherence time to T2 ~ 1.5 ms which is more than two orders of magnitude longer than that of the undressed states. As an example of a quantum application using these results we propose a protocol of quantum sensing, which shows more than an order of magnitude enhancement in the sensitivity.

Ultra-long coherence times amongst room-temperature solid-state spins.

Solid-state single spins are promising resources for quantum sensing, quantum-information processing and quantum networks, because they are compatible with scalable quantum-device engineering. However, the extension of their coherence times proves challenging. Although enrichment of the spin-zero 12C and 28Si isotopes drastically reduces spin-bath decoherence in diamond and silicon, the solid-state environment provides deleterious interactions between the electron spin and the remaining spins of its surrounding. Here we demonstrate, contrary to widespread belief, that an impurity-doped (phosphorus) n-type single-crystal diamond realises remarkably long spin-coherence times. Single electron spins show the longest inhomogeneous spin-dephasing time ([Formula: see text] ms) and Hahn-echo spin-coherence time (T2 ≈ 2.4 ms) ever observed in room-temperature solid-state systems, leading to the best sensitivities. The extension of coherence times in diamond semiconductor may allow for new applications in quantum technology.

Optically detected magnetic resonance of high-density ensemble of NV- centers in diamond.

Optically detected magnetic resonance (ODMR) is a way to characterize the ensemble of NV-centers. Recently, a remarkably sharp dip was observed in the ODMR with a high-density ensemble of NV centers. The model (Zhu et al 2014 Nat. Commun. 5 3424) indicated that such a dip was due to the spin-1 properties of the NV- centers. Here, we present many more details of the analysis to show how this model can be applied to investigate the properties of the NV- centers. By using our model, we have reproduced the ODMR with and without applied external magnetic fields. Additionally, we investigate how the ODMR is affected by the typical parameters of the ensemble NV- centers such as strain distributions, inhomogeneous magnetic fields, and homogeneous broadening width. Our model provides a way to characterize the NV- center from the ODMR, which would be crucial to realize diamond-based quantum information processing.

Analysis of the spectroscopy of a hybrid system composed of a superconducting flux qubit and diamond NV(-) centers.

A hybrid system that combines the advantages of a superconductor flux qubit and an electron spin ensemble in diamond is one of the promising devices to realize quantum information processing. Exploring the properties of the superconductor diamond system is essential for the efficient use of this device. When we perform spectroscopy of this system, significant power broadening is observed. However, previous models to describe this system are known to be applicable only when the power broadening is negligible. Here, we construct a new approach to analyze this system with strong driving, and succeed in reproducing the spectrum with the power broadening. Our results provide an efficient way to analyze this hybrid system.

Highly sensitive nanoscale spin-torque diode.

Highly sensitive microwave devices that are operational at room temperature are important for high-speed multiplex telecommunications. Quantum devices such as superconducting bolometers possess high performance but work only at low temperature. On the other hand, semiconductor devices, although enabling high-speed operation at room temperature, have poor signal-to-noise ratios. In this regard, the demonstration of a diode based on spin-torque-induced ferromagnetic resonance between nanomagnets represented a promising development, even though the rectification output was too small for applications (1.4 mV mW(-1)). Here we show that by applying d.c. bias currents to nanomagnets while precisely controlling their magnetization-potential profiles, a much greater radiofrequency detection sensitivity of 12,000 mV mW(-1) is achievable at room temperature, exceeding that of semiconductor diode detectors (3,800 mV mW(-1)). Theoretical analysis reveals essential roles for nonlinear ferromagnetic resonance, which enhances the signal-to-noise ratio even at room temperature as the size of the magnets decreases.

Multipartite entanglement among single spins in diamond.

Robust entanglement at room temperature is a necessary requirement for practical applications in quantum technology. We demonstrate the creation of bipartite- and tripartite-entangled quantum states in a small quantum register consisting of individual 13C nuclei in a diamond lattice. Individual nuclear spins are controlled via their hyperfine coupling to a single electron at a nitrogen-vacancy defect center. Quantum correlations are of high quality and persist on a millisecond time scale even at room temperature, which is adequate for sophisticated quantum operations.

In situ ESR observation of interface dangling bond formation processes during ultrathin SiO2 growth on Si(111).

We report the formation processes of interface dangling bonds (Pb centers) during initial oxidation of a clean Si(111) surface using an ultrahigh-vacuum electron-spin-resonance technique. At the oxidation of one or two Si layer(s), the Pb center density reached around 2.5-3.0 x 10(12) cm(-2), which is the same density as in the case of thick SiO2. This result shows that the Pb center density does not originate from the long-range accumulation of the structural stress between two materials, but from the chemical reactions of oxidation within a few Si atomic layers.